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K7M161835B - 512Kx36 & 1Mx18 Flow-Through NtRAM

K7M161835B_6608853.PDF Datasheet


Part No.	K7M161835B
Description	512Kx36 & 1Mx18 Flow-Through NtRAM
File Size	427.64K / 19 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 512Kx36 & 1Mx18 Flow-Through NtRAM

Related Part Number

PART	Description	Maker
K7Q163682A K7Q161882 K7Q161882A	512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
K7Q163652A K7Q161852A	512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
IS61QDPB251236A IS61QDPB251236A1 IS61QDPB251236A2	512Kx36 and 1Mx18 configuration available	Integrated Silicon Solu...
K7A161830B-QI16 K7A163630B-QC16 K7A161830B-PI25 K7	512Kx36 & 1Mx18 Synchronous SRAM	Samsung semiconductor
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K7N163601M K7N161801M	512Kx36 & 1Mx18-Bit Pipelined NtRAM TM	SAMSUNG[Samsung semiconductor]
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K7N163645AK7N163245AK7N161845A	512Kx36/32 & 1Mx18-Bit Pipelined NtRAMData Sheet	Samsung Electronic
IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc

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